Fabrication of high-entropy REBa₂Cu₃O₇−δ thin films by pulsed laser deposition

Pulsed Laser Deposition of Hydroxyapatite Thin Films

Pulsed laser deposition of VO2 thin films

High quality vanadium dioxide ~VO2! thin films have been successfully deposited by pulsed laser deposition without postannealing on ~0001! and ~101̄0! sapphire substrates. X-ray diffraction reveals that the films are highly oriented with ~010! planes parallel to the surface of the substrate. VO2 thin films on ~0001! and ~101̄0! substrates show semiconductor to metal transistions with electrical r...

Simulation of Fabrication toward High Quality Thin Films for Robotic Applications by Ionized Cluster Beam Deposition

The most commonly used method for the production of thin films is based on deposition of atoms or molecules onto a solid surface. One of the suitable method is to produce high quality metallic, semiconductor and organic thin film is Ionized cluster beam deposition (ICBD), which are used in electronic, robotic, optical, optoelectronic devices. Many important factors such as cluster size, cluster...

Investigation of Magnetite Thin-Films Produced by Pulsed Laser Deposition

Thin-films of magnetite, F@04 have been produced by the XeCl excimer laser ablation of both Fe304 and metallic Fe targets. The ablation of metallic Fe has been shown to produce about two orders of magnitude smaller concentration of boulders than the ablation of bulk magnetite. The use of single-crystal, latticematching substrates was found to be necessary at lower fluences (1 3 J cm-') for the ...

Ni–Mn–Ga thin films produced by pulsed laser deposition

Polycrystalline Ni–Mn–Ga thin films have been deposited by the pulsed laser deposition ~PLD! technique, using slices of a Ni–Mn–Ga single crystal as targets and onto Si ~100! substrates at temperatures ranging from 673 K up to 973 K. Off-stoichiometry thin films were deposited at a base pressure of 1310 Torr or in a 5 mTorr Ar atmosphere. Samples deposited in vacuum and temperatures above 823 K...